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          首頁 >SST29EE010>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SST29EE010-150-4I-EH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-150-4I-NH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-150-4I-PH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-150-4I-UH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-150-4I-WH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-200-4C-EH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-200-4C-NH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-200-4C-PH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-200-4C-UH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          SST29EE010-200-4C-WH

          1 Mbit (128K x8) Page-Mode EEPROM

          PRODUCT DESCRIPTION The 29EE010/29LE010/29VE010 are 128K x 8 CMOS page mode EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alterna

          文件:326.37 Kbytes 頁數:26 Pages

          SST

          Silicon Storage Technology, Inc

          詳細參數

          • 型號:

            SST29EE010

          • 制造商:

            SST

          • 制造商全稱:

            Silicon Storage Technology, Inc

          • 功能描述:

            1 Megabit(128K x8) Page-Mode EEPROM

          供應商型號品牌批號封裝庫存備注價格
          SST
          2015+
          SOP/DIP
          19889
          一級代理原裝現貨,特價熱賣!
          詢價
          24+
          50
          本站現庫存
          詢價
          SST
          16+
          PLCC
          2500
          進口原裝現貨/價格優(yōu)勢!
          詢價
          (FLASH)
          23+
          PLCC
          5000
          原裝正品,假一罰十
          詢價
          SST
          22+
          PLCC
          2000
          原裝正品現貨
          詢價
          SST
          2447
          DIP
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
          詢價
          25+
          PLCC32
          500000
          行業(yè)低價,代理渠道
          詢價
          SST
          22+
          DIP
          12245
          現貨,原廠原裝假一罰十!
          詢價
          SST
          PLCC
          68500
          一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
          詢價
          ST
          2024+
          PLCC
          50000
          原裝現貨
          詢價
          更多SST29EE010供應商 更新時間2026-1-21 16:40:00
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