Power MOSFET

FEATURES ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? RDS(on) Specified at VGS = 4 V and 5 V ? 175 °C Operating Temperature ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from V

文件：1.6111 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Logic-Level Gate Drive ? RDS(on) Specified at VGS = 4 V an

文件：1.46024 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.53667 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.63806 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：4.02252 Mbytes 頁數(shù)：7 Pages

KERSEMI

Power MOSFET

文件：1.56243 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司