Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

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VISHAYVishay Siliconix

威世威世科技公司

N-Channel 100-V (D-S) MOSFET

文件：1.05691 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Surface Mount Schottky Barrier Rectifier

FEATURES ? Low profile package ? Ideal for automated placement ? Guardring for overvoltage protection ? Low power losses, high efficiency ? Low forward voltage drop ? High surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definiti

文件：86.98 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface-Mount Schottky Barrier Rectifier

FEATURES ? Low profile package ? Ideal for automated placement ? Guardring for overvoltage protection ? Low power losses, high efficiency ? Low forward voltage drop ? High surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for definit

文件：130.87 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop

FEATURES ? Glass passivated chip junction ? Ultrafast reverse recovery time ? Low forward voltage drop ? Low leakage current ? Low switching losses, high efficiency ? High forward surge capability ? Solder dip 260 °C, 40 s ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC T

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VISHAYVishay Siliconix

威世威世科技公司