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          首頁(yè) >SIHLR120-E3>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SIHLR120-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

          文件:613.11 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SIHLU120-E3

          N-Channel 100-V (D-S) MOSFET

          文件:1.05691 Mbytes 頁(yè)數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          SIHLU120-E3

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

          文件:613.11 Kbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          B120-E3

          Surface Mount Schottky Barrier Rectifier

          FEATURES ? Low profile package ? Ideal for automated placement ? Guardring for overvoltage protection ? Low power losses, high efficiency ? Low forward voltage drop ? High surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: For definiti

          文件:86.98 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          B120-E3

          Surface-Mount Schottky Barrier Rectifier

          FEATURES ? Low profile package ? Ideal for automated placement ? Guardring for overvoltage protection ? Low power losses, high efficiency ? Low forward voltage drop ? High surge capability ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for definit

          文件:130.87 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          MUR120-E3

          Low forward voltage drop

          FEATURES ? Glass passivated chip junction ? Ultrafast reverse recovery time ? Low forward voltage drop ? Low leakage current ? Low switching losses, high efficiency ? High forward surge capability ? Solder dip 260 °C, 40 s ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC T

          文件:71.54 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            SIHLR120-E3

          • 制造商:

            VISHAY

          • 制造商全稱(chēng):

            Vishay Siliconix

          • 功能描述:

            Power MOSFET

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          VISHAY/威世
          2511
          TO-252
          360000
          電子元器件采購(gòu)降本30%!原廠直采,砍掉中間差價(jià)
          詢(xún)價(jià)
          NK/南科功率
          2025+
          TO-252
          986966
          國(guó)產(chǎn)
          詢(xún)價(jià)
          VISHAY/威世
          23+
          TO-252
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢(xún)價(jià)
          VISHAY/威世
          23+
          TO-252
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢(xún)價(jià)
          VISHAY/威世
          24+
          TO-252
          60000
          詢(xún)價(jià)
          IR
          23+
          SOT252
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
          詢(xún)價(jià)
          IR
          SOT252
          22+
          6000
          十年配單,只做原裝
          詢(xún)價(jià)
          IR
          23+
          SOT252
          11200
          原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
          詢(xún)價(jià)
          IR
          23+
          SOT252
          7000
          詢(xún)價(jià)
          VIS
          23+
          TO252D-PAK
          10000
          原裝正品,假一罰十
          詢(xún)價(jià)
          更多SIHLR120-E3供應(yīng)商 更新時(shí)間2026-1-20 16:33:00
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