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                >SIHFR310-E3>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    SIHFR310-E3
    Power MOSFET
    
DESCRIPTION
Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st
    文件：1.41713 Mbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    SIHFR310-E3
    Power MOSFET
    
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st
    文件：3.93309 Mbytes 頁數(shù)：7 Pages
    KERSEMI
    

    SIHFU310-E3
    Power MOSFET
    
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st
    文件：3.93309 Mbytes 頁數(shù)：7 Pages
    KERSEMI
    

    SIHFU310-E3
    Power MOSFET
    
DESCRIPTION
Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st
    文件：1.41713 Mbytes 頁數(shù)：8 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    VSSB310-E3
    Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier
    
FEATURES
? Low profile package
? Ideal for automated placement
? Trench MOS Schottky technology
? Low power losses, high efficiency
? Low forward voltage drop
? Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
? Material categorization: for definitions of compliance
please see 
    文件：102.72 Kbytes 頁數(shù)：5 Pages
    VISHAYVishay Siliconix
    威世威世科技公司
    

    
            
    
		
        
    
            
    
                
    詳細參數(shù)
    
            
    
            
      
            	
    • 型號：
      SIHFR310-E3
    • 制造商：
      VISHAY 
    • 制造商全稱：
      Vishay Siliconix 
    • 功能描述：
      Power MOSFET 
    
            
    
        
    
            
    供應商型號品牌批號封裝庫存備注價格
    
                
    



    VB
    		

    25+
    		

    TO-252
    		

    10000
    		

    原裝現(xiàn)貨假一罰十
    		
詢價
    

    



    V
    		

    TO-252
    		

    22+
    		

    6000
    		

    十年配單,只做原裝
    		
詢價
    

    



    VISHAY/威世
    		

    23+
    		

    TO-252
    		

    11200
    		

    原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
    		
詢價
    

    



    Vishay
    		

    20+
    		

    TO-252
    		

    36900
    		

    原裝優(yōu)勢主營型號-可開原型號增稅票
    		
詢價
    

    



    VISHAY/威世
    		

    23+
    		

    TO-252
    		

    50000
    		

    全新原裝正品現(xiàn)貨,支持訂貨
    		
詢價
    

    



    VISHAY/威世
    		

    23+
    		

    TO-252
    		

    50000
    		

    全新原裝正品現(xiàn)貨,支持訂貨
    		
詢價
    

    



    VISHAY/威世
    		

    22+
    		

    SOT-252
    		

    100000
    		

    代理渠道/只做原裝/可含稅
    		
詢價
    

    



    Vishay
    		

    25+
    		

    TO-252
    		

    12300
    		

    獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
    		
詢價
    

    



    VISHAY/威世
    		

    24+
    		

    TO-252
    		

    60000
    		

    全新原裝現(xiàn)貨
    		
詢價
    

    



    VISHAY/威世
    		

    22+
    		

    TO-252
    		

    20000
    		

    只做原裝
    		
詢價
    

            
    
        
    
        
    更多SIHFR310-E3供應商
            更新時間2026-1-22 8:40:00
        
    
        
    
          
    
            
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