Power MOSFET

DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：3.93309 Mbytes 頁數(shù)：7 Pages

KERSEMI

Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Low profile package ? Ideal for automated placement ? Trench MOS Schottky technology ? Low power losses, high efficiency ? Low forward voltage drop ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? Material categorization: for definitions of compliance please see

文件：102.72 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ideal for automated placement

文件：94.04 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司