| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SI4420 | No alignment required in production 文件：1.42884 Mbytes 頁(yè)數(shù)：33 Pages | SILABS 芯科科技 | SILABS | |
Si4420 | 專(zhuān)有 EZRadio?1 GHz 以下無(wú)線(xiàn) IC Si4420 EZRadioPRO ISM 波段采用 TSSOP16 封裝。 | Silicon Labs 芯科 | Silicon Labs | |
N-Channel, 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested 文件：92.54 Kbytes 頁(yè)數(shù)：1 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch 文件：1.00568 Mbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
HEXFET Power MOSFET Description This N-channel HEXFET? power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO 文件：113.81 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
Single N-Channel Logic Level PowerTrencha MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery 文件：281.88 Kbytes 頁(yè)數(shù)：3 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Product availability: Si4420DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS? technology. Applications ■ DC to DC convertors ■ DC motor 文件：254.01 Kbytes 頁(yè)數(shù)：12 Pages | PHI PHI | PHI | ||
N-Channel, 30-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested 文件：92.54 Kbytes 頁(yè)數(shù)：1 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFETPower MOSFET Description This N-channel HEXFET? power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO 文件：119.92 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08611 Mbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI |
技術(shù)參數(shù)
- 最大數(shù)據(jù)傳輸率 (FSK)：
256
- 最大數(shù)據(jù)傳輸率 (OOK)：
0
- RX 靈敏度 (dBm)：
—
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
1688 |
房間現(xiàn)貨庫(kù)存:QQ:373621633 |
詢(xún)價(jià) | |||
SI |
24+ |
3.9mm8 |
3000 |
自己現(xiàn)貨 |
詢(xún)價(jià) | ||
SI |
23+ |
SOP8 |
5700 |
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢(xún)價(jià) | ||
24+ |
SOP8P |
6868 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) | |||
IOR |
25+ |
SOP8 |
4690 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
SI |
25+ |
8P |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢(xún)價(jià) | ||
SILICON |
23+ |
TSSOP-1 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)! |
詢(xún)價(jià) | ||
IR |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
SI |
2447 |
SOP8 |
100500 |
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢(xún)價(jià) | ||
SILICON |
23+ |
TSSOP-16 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) |
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