首頁(yè) >SI4420DYPBF>規(guī)格書(shū)列表
| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SI4420DYPBF | HEXFETPower MOSFET Description This N-channel HEXFET? power MOSFET is produced using International Rectifiers advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The SO 文件:119.92 Kbytes 頁(yè)數(shù):8 Pages | IRF | IRF | |
SI4420DYPBF | Simple Drive Requirements 文件:119.92 Kbytes 頁(yè)數(shù):8 Pages | IRF | IRF | |
Simple Drive Requirements 文件:119.92 Kbytes 頁(yè)數(shù):8 Pages | IRF | IRF | ||
SI4420DYPBF | HEXFET\u0001\u0001Power MOSFET | Infineon 英飛凌 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
SI4420DYPBF
- 功能描述:
MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
58900 |
詢(xún)價(jià) | ||||
INFINEON |
1651+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢(xún)價(jià) | ||
Infineon |
24+ |
NA |
3204 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢(xún)價(jià) | ||
VISHAY |
20+ |
SOP-8 |
43000 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
IR |
24+ |
SOP-8 |
65200 |
一級(jí)代理/放心采購(gòu) |
詢(xún)價(jià) | ||
IR |
25+ |
SOP-8 |
9690 |
現(xiàn)貨 |
詢(xún)價(jià) | ||
INFINEON |
25+ |
SOP-8 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢(xún)更多詳細(xì)信息, |
詢(xún)價(jià) | ||
IR |
25+ |
SOP-8 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) |
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