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Features: ● PIV TO 600 VOLTS ● HYPER FAST RECOVERY 40 NSEC MAX ● VOIDLESS CONSTRUCTION ● FOR HIGH EFFICIENCY APPLICATIONS ● HERMETICALLY SEALED ● LOW FORWARD DROP 1.35 VOLTS ● LOW LEAKAGE CURRENT 10 μA ● REPLACE UNITRODE UES1304 SERIES WHERE FASTER trr IS REQUITED

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SSDI

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ?TrenchFET? Power MOSFETs ? 2.5 V Rated ? Compliant to RoHS Directive 2002/95/EC

文件：45.03 Kbytes 頁數(shù)：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 2.5-V (G-S) MOSFET

文件：100.23 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ?TrenchFET? Power MOSFETs ? 2.5 V Rated ? Compliant to RoHS Directive 2002/95/EC

文件：226.92 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司