40 AMPS 200- 600 VOLTS 30 nsec HYPER FAST RECTIFIER

Features: ? Guaranteed High Temp. trr: 50 nsec Max (Axial) trr: 60nsec Max (SMS) ? Hyper Fast Recovery: 30 nsec Max. ? PIV to 600 Volts ? Void Free Construction ? Hermetically Sealed ? Low Reverse Leakage Current ? For High Efficiency Applications ? Replacement for 1N6626 Series where fast

文件：319.87 Kbytes 頁數(shù)：2 Pages

SSDI

4 A, 200 V Hyperfast Recovery Rectifier

? Guaranteed High Temp. trr: 50 nsec Max (Axial) trr:60 nsec Max (SMS)\n? Hyper Fast Recovery: 30 nsec Max.\n? PIV to 600 Volts\n? Void Free Construction\n? Hermetically Sealed\n? Low Reverse Leakage Current\n? For High Efficiency Applications\n? Replacement for 1N6626 Series Where Faster trr is Req;

SSDI

N-Channel 30-V (D-S) MOSFET

文件：94.22 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement Mode MOSFET

文件：231.9 Kbytes 頁數(shù)：10 Pages

SINOPWER

大中集成電路

N-Channel 60-V (D-S) MOSFET

文件：1.01488 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體