| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation 1 Features ? Vendor item drawing available, VID V62/23627-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL) 文件：1.05358 Mbytes 頁數(shù)：25 Pages | TI 德州儀器 | TI | ||
絲?。?strong>SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation 1 Features ? Vendor item drawing available, VID V62/23627-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL) 文件：997.33 Kbytes 頁數(shù)：24 Pages | TI 德州儀器 | TI | ||
絲?。?strong>SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation 1 Features ? Vendor item drawing available, VID V62/23627-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL) 文件：1.05358 Mbytes 頁數(shù)：25 Pages | TI 德州儀器 | TI | ||
絲?。?strong>SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation 1 Features ? Vendor item drawing available, VID V62/23627-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL) 文件：1.05358 Mbytes 頁數(shù)：25 Pages | TI 德州儀器 | TI | ||
絲?。?strong>SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation 1 Features ? Vendor item drawing available, VID V62/23627-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL) 文件：997.33 Kbytes 頁數(shù)：24 Pages | TI 德州儀器 | TI | ||
絲?。?strong>SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation 1 Features ? Vendor item drawing available, VID V62/23627-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL) 文件：997.33 Kbytes 頁數(shù)：24 Pages | TI 德州儀器 | TI | ||
絲?。?strong>SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation 1 Features ? Vendor item drawing available, VID V62/23627-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL) 文件：1.05358 Mbytes 頁數(shù)：25 Pages | TI 德州儀器 | TI |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TI/德州儀器 |
25+ |
原廠封裝 |
10280 |
原廠授權代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
TI/德州儀器 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
TI/德州儀器 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
TI |
25+ |
32-VQFN(5x5) |
20948 |
樣件支持,可原廠排單訂貨! |
詢價 | ||
TI |
25+ |
32-VQFN(5x5) |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
TI/德州儀器 |
25+ |
原廠封裝 |
11000 |
詢價 | |||
TI/德州儀器 |
25+ |
原廠封裝 |
9999 |
詢價 |
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