SiC Schottky Barrier Diode Bare Die

Features 1) Low forward voltage 3) Temperature independent switching behavior 2) Negligible recovery time/current 4) High surge current capability Applications ?Switch Mode Power Supply ?EV Charger ?Uninterruptible Power Supply ?Air Conditioner ?Solar Inverter ?Motor Drive

文件：912.96 Kbytes 頁數(shù)：7 Pages

ROHM

羅姆

N & P Pair Enhancement Mode MOSFET

文件：263.88 Kbytes 頁數(shù)：11 Pages

SYNC-POWER

擎力科技

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

RODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (m?) Max 20 4A 75 @ VGS=2.5V 60 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (m?) Max -20V -2.5A 190 @ VGS=-2.5V 138 @ VGS=-4.5V

文件：244.83 Kbytes 頁數(shù)：11 Pages

SAMHOP

三合微科

N- and P-Channel 20V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

文件：613.88 Kbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體