絲?。?strong>S4；Package：SOD-323；SCHOTTKY BARRIER DIODE

FEATURES ? Low Forward Voltage Drop ? Guard Ring Construction for Transient Protection ? Negligible Reverse Recovery Time ? Low Capacitance ? Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ? Case: SOD-323 ? Terminals: Solderable per MIL-STD-750, Method 2026 ? Appro

文件：470.3 Kbytes 頁數(shù)：3 Pages

YFWDIODE

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絲?。?strong>S4；Package：SOD-323；General-purpose Schottky diodes

General description General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed ■ Low leakage current ■ High breakdown voltage ■ Low capacitance Applications ■ Ultra high-speed switching ■ Voltage clamping

文件：227.24 Kbytes 頁數(shù)：21 Pages

恩XP

絲?。?strong>S4；Package：SOD-523；HIGH SPEED SWITCHING APPLICATION

Features ● Small Package ● Low Forward Voltage VF = 0.23V(TYP.) @IF = 5 mA

文件：317.83 Kbytes 頁數(shù)：2 Pages

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絲?。?strong>S4；Package：SOD-523；Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE Features： ? High Speed； ? High Reliability； ? Small Package； ? Low Forward Voltage； Applications： ? High Speed Switching；

文件：285.96 Kbytes 頁數(shù)：1 Pages

SHENZHENSLS

三聯(lián)盛

絲?。?strong>S4；Package：SOT-883；High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 1.5 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Small SMD plastic packages Applications ■

文件：105.23 Kbytes 頁數(shù)：15 Pages

恩XP

絲?。?strong>S4；Package：SOT-343；NPN 2 GHz power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES ? High power gain ? High efficiency ? Small size discrete power amplifier ? 1.9 GHz operating area ? Gold metallization ensures excellent reliability ? Linear and non-l

文件：98.03 Kbytes 頁數(shù)：12 Pages

PHI

PHI

絲印：S4；Package：SMA；LOW FORWARD VOLTAGE DROP

FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

文件：29.78 Kbytes 頁數(shù)：2 Pages

NIEC

絲?。?strong>S4；Package：SMT5；General purpose (dual transistors)

Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage.

文件：54.45 Kbytes 頁數(shù)：1 Pages

ROHM

羅姆

絲?。?strong>S4；Package：6Ld??TDFN；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

250mA Single LDO with Low IQ, Low Noise and High PSRR LDO The ISL9021 is a single LDO providing high performance low input voltage, high PSRR. It delivers guaranteed continuous 250mA load current and is stable with 1μF to 4.7μF of output capacitance (±30) with an ESR range of 5mΩ to 400mΩ. Featu

文件：494.85 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

絲印：S4；Package：SOD-323；Schottky Barrier Diode

FEATURES ? Guard Ring Construction for Transient Protection ? Negligible Reverse Recovery Time ? Low Capacitance ? Low Forward Voltage Drop

文件：642.2 Kbytes 頁數(shù)：3 Pages

YFWDIODE

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