絲?。?strong>S4；Package：SOD-323；SCHOTTKY BARRIER DIODE

FEATURES ? Low Forward Voltage Drop ? Guard Ring Construction for Transient Protection ? Negligible Reverse Recovery Time ? Low Capacitance ? Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ? Case: SOD-323 ? Terminals: Solderable per MIL-STD-750, Method 2026 ? Appro

文件：470.3 Kbytes 頁數(shù)：3 Pages

YFWDIODE

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絲?。?strong>S4；Package：SOD-323；General-purpose Schottky diodes

General description General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed ■ Low leakage current ■ High breakdown voltage ■ Low capacitance Applications ■ Ultra high-speed switching ■ Voltage clamping

文件：227.24 Kbytes 頁數(shù)：21 Pages

恩XP

絲印：S4；Package：SOD-523；HIGH SPEED SWITCHING APPLICATION

Features ● Small Package ● Low Forward Voltage VF = 0.23V(TYP.) @IF = 5 mA

文件：317.83 Kbytes 頁數(shù)：2 Pages

YFWDIODE

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絲印：S4；Package：SOD-523；Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE Features： ? High Speed； ? High Reliability； ? Small Package； ? Low Forward Voltage； Applications： ? High Speed Switching；

文件：285.96 Kbytes 頁數(shù)：1 Pages

SHENZHENSLS

三聯(lián)盛

絲印：S4；Package：SOT-883；High-speed switching diodes

General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Features ■ High switching speed: trr ≤ 4 ns ■ Low capacitance: Cd ≤ 1.5 pF ■ Low leakage current ■ Reverse voltage: VR ≤ 100 V ■ Small SMD plastic packages Applications ■

文件：105.23 Kbytes 頁數(shù)：15 Pages

恩XP

絲?。?strong>S4；Package：SOT-343；NPN 2 GHz power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. FEATURES ? High power gain ? High efficiency ? Small size discrete power amplifier ? 1.9 GHz operating area ? Gold metallization ensures excellent reliability ? Linear and non-l

文件：98.03 Kbytes 頁數(shù)：12 Pages

PHI

PHI

絲?。?strong>S4；Package：SMA；LOW FORWARD VOLTAGE DROP

FEATURES * Miniature Size,Surface Mount Device * Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * 30 Volts through 100Volts Types Available * Packaged in 12mm Tape and Reel * Not Rolling During Assembly

文件：29.78 Kbytes 頁數(shù)：2 Pages

NIEC

絲?。?strong>S4；Package：SMT5；General purpose (dual transistors)

Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage.

文件：54.45 Kbytes 頁數(shù)：1 Pages

ROHM

羅姆

絲印：S4；Package：6Ld??TDFN；250mA Single LDO with Low IQ, Low Noise and High PSRR LDO

250mA Single LDO with Low IQ, Low Noise and High PSRR LDO The ISL9021 is a single LDO providing high performance low input voltage, high PSRR. It delivers guaranteed continuous 250mA load current and is stable with 1μF to 4.7μF of output capacitance (±30) with an ESR range of 5mΩ to 400mΩ. Featu

文件：494.85 Kbytes 頁數(shù)：10 Pages

RENESAS

瑞薩

絲?。?strong>S4；Package：SOD-323；Schottky Barrier Diode

FEATURES ? Guard Ring Construction for Transient Protection ? Negligible Reverse Recovery Time ? Low Capacitance ? Low Forward Voltage Drop

文件：642.2 Kbytes 頁數(shù)：3 Pages

YFWDIODE

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