SCHOTTKY BARRIER RECTIFIERS(15A,30-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diode

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MOSPEC

統(tǒng)懋

Schottky Diode

Mospec

統(tǒng)懋

SCHOTTKY BARRIER RECTIFIER

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CHENMKO

力勤

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) ? High forward transfer admittance: |Yfs| = 7.0 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

東芝

isc N-Channel MOSFET Transistor

? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 0.24? (typ.) ? Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

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ISC

無錫固電

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝