TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) ? High forward transfer admittance: |Yfs| = 7.0 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 0.24? (typ.) ? Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

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ISC

無錫固電

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 / 馬來西亞 Drain current ID 15 A \nPower Dissipation PD 50 W \nDrain-Source voltage VDSS 500 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝