絲?。?strong>S125；Package：SOT23-5；BUS BUFFER/LINE DRIVER 3-STATE

Features ? Operate from 1.65V to 5.5V ? Inputs Accept Voltages to 5.5V ? High Noise Immunity ? Low Power Dissipation ? ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) ~1000-V Charged-Device Model (C101)

文件：5.96274 Mbytes 頁數(shù)：10 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/s125sep/marking.html">S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features ? VID V62/23631-01XE ? Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.01126 Mbytes 頁數(shù)：23 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/s125sep/marking.html">S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features ? VID V62/23631-01XE ? Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/s125sep/marking.html">S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features ? VID V62/23631-01XE ? Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/s125sep/marking.html">S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features ? VID V62/23631-01XE ? Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.01126 Mbytes 頁數(shù)：23 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/s125sep/marking.html">S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features ? VID V62/23631-01XE ? Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/s125sep/marking.html">S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features ? VID V62/23631-01XE ? Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.01126 Mbytes 頁數(shù)：23 Pages

TI

德州儀器

絲印：S125SEP；Package：TSSOP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features ? VID V62/23631-01XE ? Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

文件：1.06752 Mbytes 頁數(shù)：24 Pages

TI

德州儀器

Surface Mount Si-Bridge Rectifiers

Surface Mount Si-Bridge Rectifiers ? Nominal current 0.8 A ? Alternating input voltage 40…500 V ? Plastic case 4.7 x 3.9 x 2.4 [mm] ? Weight approx. 0.1 g ? Plastic material has UL classification 94V-0 ? Standard

文件：139.46 Kbytes 頁數(shù)：2 Pages

DIOTEC

德歐泰克

SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers

SUPER FAST RECOVERY DIODE SCHOTTKY DIODE GLASS PASSIVATED BRIDGE RECTIFIER

文件：111.67 Kbytes 頁數(shù)：1 Pages

RFE

RFE international