Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：NPN\nInternal Connection：Single\nComplementary Product：RN2318\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.1 A \nCollector-emitter voltage VCEO 50 V ;

Toshiba

東芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ? With built-in bias resistors ? Simplify circuit design ? Reduce a quantity of parts and manufacturing process ? Complementary to RN2314~RN2318

文件：271.08 Kbytes 頁數(shù)：8 Pages

TOSHIBA

東芝

Package：SC-70，SOT-323；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V 0.1A USM

Toshiba Semiconductor and Storage

300A Threaded Stud Type Screw Silicon Rectifier Diodes for Excitation

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

文件：515.929 Kbytes 頁數(shù)：4 Pages

THINKISEMI

思祁半導(dǎo)體

5.5 V INPUT, 100 mA, 95 nA SUPER LOW CURRENT CONSUMPTION VOLTAGE REGULATOR

文件：856.37 Kbytes 頁數(shù)：42 Pages

ABLIC

艾普凌科

2150 MHz 1 Watt Power Amplifier with Active Bias

Product Description Stanford Microdevicesa€? SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable an

文件：227.92 Kbytes 頁數(shù)：6 Pages

STANFORD