300A Threaded Stud Type Screw Silicon Rectifier Diodes for Excitation

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

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THINKISEMI

思祁半導體

2150 MHz 1 Watt Power Amplifier with Active Bias

Product Description Stanford Microdevicesa€? SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable an

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STANFORD

2150 MHz 1 Watt Power Amplifier with Active Bias

Product Description Sirenza Microdevicesa€? SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

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SIRENZA

NPN RF POWER TRANSISTOR

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ASI