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          首頁(yè) >RM11>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          RM11

          SILICON RECTIFIER DIODES

          文件:39.49 Kbytes 頁(yè)數(shù):2 Pages

          EIC

          RM110N100BT2

          絲?。?a target="_blank" title="Marking" href="/110n100/marking.html">110N100;Package:TO-220;N-Channel Trench MOSFET

          Features Advanced trench cell design Low Thermal Resistance VDSS≥100V RDS(ON)≦4.1mΩ@VGS=10V

          文件:1.07406 Mbytes 頁(yè)數(shù):5 Pages

          RECTRON

          麗正國(guó)際

          RM110N150T2

          絲?。?a target="_blank" title="Marking" href="/110n150/marking.html">110N150;Package:TO-220-3L;N-Channel Super Trench Power MOSFET

          Description The RM110N150T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

          文件:1.48373 Mbytes 頁(yè)數(shù):7 Pages

          RECTRON

          麗正國(guó)際

          RM110N82T2

          絲印:110N82;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

          Description The RM110N82T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =110A RDS(ON)

          文件:286.13 Kbytes 頁(yè)數(shù):7 Pages

          RECTRON

          麗正國(guó)際

          RM110N90DF

          絲印:110N90;Package:DFN5x6;N-Channel Trench MOSFET

          Features High Efficiency Low Dense Cell Design VDSS≥90V RDS(ON)≦4.7mΩ@VGS=10V improved dv/dt capability Reliable and Rugged Application Halogen-free Networking, Load Swtich LED lighting , Quick Charger

          文件:900.69 Kbytes 頁(yè)數(shù):5 Pages

          RECTRON

          麗正國(guó)際

          RM115N65T2

          絲印:115N65;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

          Description The RM115N65T2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =115A RDS(ON)

          文件:310.54 Kbytes 頁(yè)數(shù):7 Pages

          RECTRON

          麗正國(guó)際

          RM11A

          Rectifier Diodes

          Description The EM2 is a 400 V, 1.2 A general-purpose rectifier diode with low loss characteristics. This rectifier diode is for a commercial power supply. Features ● VRM------------------------------------------------------ 400 V ● IF(AV)-----------------------------------------------------

          文件:20.34 Kbytes 頁(yè)數(shù):1 Pages

          SANKEN

          三墾

          RM11A

          Silicon Diode

          Scope The present specifications shall apply to an RM11A. Outline Type Silicon Diode Structure Resin Molded Applications Commercial Frequency Rectification Flammability UL94V-0 (Equivalent)

          文件:178.02 Kbytes 頁(yè)數(shù):3 Pages

          SANKEN

          三墾

          RM11A

          PLASTIC SILICON RECTIFIER

          FEATURES ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

          文件:50.79 Kbytes 頁(yè)數(shù):2 Pages

          BILIN

          銀河微電

          RM11B

          Rectifier Diodes

          Rectifier Diodes

          文件:68.88 Kbytes 頁(yè)數(shù):2 Pages

          SANKEN

          三墾

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            RM11

          • 制造商:

            Belden Inc.

          • 類(lèi)別:

            工具 > 配件

          • 包裝:

          • 描述:

            TOOL REPLCMT BLADES

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          更多RM11供應(yīng)商 更新時(shí)間2026-1-16 17:22:00
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