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          首頁 >RM10>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          RM100N40DF

          絲?。?a target="_blank" title="Marking" href="/100n40/marking.html">100N40;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N40DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)

          文件:2.08748 Mbytes 頁數(shù):8 Pages

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          RM100N40DFV

          絲?。?a target="_blank" title="Marking" href="/100n40/marking.html">100N40;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          General Features VDS =40V,ID =100A RDS(ON)

          文件:1.02413 Mbytes 頁數(shù):8 Pages

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          RM100N60AT2

          絲印:100N60;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60AT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:346 Kbytes 頁數(shù):7 Pages

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          RM100N60BT2

          絲?。?a target="_blank" title="Marking" href="/100n60/marking.html">100N60;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60BT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:1.44149 Mbytes 頁數(shù):6 Pages

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          RM100N60DF

          絲?。?a target="_blank" title="Marking" href="/an60/marking.html">AN60;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

          文件:158.88 Kbytes 頁數(shù):6 Pages

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          RM100N60DFV

          絲?。?a target="_blank" title="Marking" href="/an60/marking.html">AN60;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60DFV uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =65V,ID =95A RDS(ON)

          文件:224.17 Kbytes 頁數(shù):6 Pages

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          RM100N60HD

          絲?。?a target="_blank" title="Marking" href="/100n60/marking.html">100N60;Package:TO-263;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60HD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:493.23 Kbytes 頁數(shù):7 Pages

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          RM100N60LD

          絲?。?a target="_blank" title="Marking" href="/100n06/marking.html">100N06;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

          文件:384.16 Kbytes 頁數(shù):7 Pages

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          RM100N60T7

          絲?。?a target="_blank" title="Marking" href="/100n60/marking.html">100N60;Package:TO-247;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N60T7 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

          文件:474.17 Kbytes 頁數(shù):7 Pages

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          RM100N65DF

          絲?。?a target="_blank" title="Marking" href="/an65/marking.html">AN65;Package:DFN5X6-8L;N-Channel Enhancement Mode Power MOSFET

          Description The RM100N65DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

          文件:278.89 Kbytes 頁數(shù):7 Pages

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          技術(shù)參數(shù)

          • Lef [mm] *:

            44.6

          • Aef [mm2] *:

            96.6

          • Vef [mm3] *:

            4310

          • AL [nH/turns2]:

            4500±25%

          • Gap [μm]:

            ungapped

          • μe:

            ≈1650

          • ROHS:

            v

          供應(yīng)商型號品牌批號封裝庫存備注價格
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          2371
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          25+
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          6675
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          23+
          DIP
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
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          MITSUMI
          2018+
          SOP/DIPQFP
          1080
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          Sanken
          25+
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          9350
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          24+
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          60000
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          Sanken Electric
          23+
          TO-18
          12800
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          4000
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          6000
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          更多RM10供應(yīng)商 更新時間2026-1-20 14:12:00
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