N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers.

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

文件：92.71 Kbytes 頁(yè)數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS

NJS

N-Ch Enhancement Mode Power MOSFET

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SECOS

喜可士

N-channel 200 V, 1.2 ?, 1 A, SOT-223 MESH OVERLAY? Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY? process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

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STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.2 ? - 1A - SOT-223 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLEIN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DI

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STMICROELECTRONICS

意法半導(dǎo)體