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首頁 >RFL>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
RFL1N12L	文件：31 Kbytes Page：4 Pages	1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a 文件：31 Kbytes 頁數(shù)：4 Pages	INTERSIL	INTERSIL
RFL1N15	文件：43.23 Kbytes Page：5 Pages	1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：43.23 Kbytes 頁數(shù)：5 Pages	INTERSIL	INTERSIL
RFL1N15L	文件：31 Kbytes Page：4 Pages	1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a 文件：31 Kbytes 頁數(shù)：4 Pages	INTERSIL	INTERSIL
RFL1N18	文件：96.15 Kbytes Page：2 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive 文件：96.15 Kbytes 頁數(shù)：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
RFL1N18	文件：43.36 Kbytes Page：5 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：43.36 Kbytes 頁數(shù)：5 Pages	INTERSIL	INTERSIL
RFL1N18L	文件：92.71 Kbytes Page：2 Pages	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. 文件：92.71 Kbytes 頁數(shù)：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
RFL1N20	文件：43.36 Kbytes Page：5 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：43.36 Kbytes 頁數(shù)：5 Pages	INTERSIL	INTERSIL
RFL1N20	文件：96.15 Kbytes Page：2 Pages	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive 文件：96.15 Kbytes 頁數(shù)：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
RFL1N20L	文件：92.71 Kbytes Page：2 Pages	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. 文件：92.71 Kbytes 頁數(shù)：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI
RFL1P08	文件：90.53 Kbytes Page：2 Pages	1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件：90.53 Kbytes 頁數(shù)：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司	NJSEMI

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技術(shù)參數(shù)

Tolerance：
+/-20%
Voltage–Rated：
160
Dielectric：
–
OperatingTemperature：
-40 ~ 105 °C (see datasheet)
Package/Case：
Radial Can
Applications：
Electronic Ballast
MountingType：
Through Hole
Size/Dimension：
Diameter
Height–Seated(Max)：
–
Thickness(Max)：
–
LeadSpacing：
(see datasheet)
LeadStyle：
Radial Leaded
Features：
High R.C.
LoadLife：
8000 ~ 10000 Hours @ 105?°C
Series：
RFL
Packaging：
Tape and Reel / Ammo
PartStatus：
Active

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
芯有半導(dǎo)體（深圳）有限公司	RFL6000-CD90-V2930-1	QUALCOMM	05/06+	BGA	14300	全新原裝100真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	RFLV-HJBITR	STMicroelectronics	24+	QFP	5000	公司存貨	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	RFL6000	QULACOMM	23+	QFN	350	專營高頻管模塊,全新原裝!	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	RFL6200	QUALCOMM	23+	QFN	5000	原裝正品,假一罰十	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	RFL2N05L	N/A	24+		6868	原裝現(xiàn)貨,可開13%稅票	詢價(jià)
深圳市凌旭科技有限公司	RFLPF10051G8DM5T51	WALSIN	2016+	SMD	3500	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市鵬和科技有限公司	RFLPF1608060A0T	華新	24+	0603	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市卓越微芯電子有限公司	RFL6100	QUALCOMM	25+	BGA	4100	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
上海專毅電子科技有限公司	RFLV-HJBITR	STMicroelectronics	17+	QFP	9800	只做全新進(jìn)口原裝,現(xiàn)貨庫存	詢價(jià)
上海鑫科潤電子科技有限公司	RFL6000	QUALCOMM	07+	QFN	2130	原裝現(xiàn)貨海量庫存歡迎咨詢	詢價(jià)

更多RFL供應(yīng)商更新時(shí)間2026-1-22 16:20:00

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