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首頁 >RF5>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
RF5163	文件：510.5 Kbytes Page：12 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli 文件：510.5 Kbytes 頁數(shù)：12 Pages	RFMD 威訊聯(lián)合	RFMD
RF5163L	文件：510.5 Kbytes Page：12 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli 文件：510.5 Kbytes 頁數(shù)：12 Pages	RFMD 威訊聯(lián)合	RFMD
RF5163PCBA-41X	文件：510.5 Kbytes Page：12 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli 文件：510.5 Kbytes 頁數(shù)：12 Pages	RFMD 威訊聯(lián)合	RFMD
RF5163PCBA-WD	文件：510.5 Kbytes Page：12 Pages	3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF ampli 文件：510.5 Kbytes 頁數(shù)：12 Pages	RFMD 威訊聯(lián)合	RFMD
RF5176	文件：169.89 Kbytes Page：6 Pages	3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER Product Description The RF5176 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 文件：169.89 Kbytes 頁數(shù)：6 Pages	RFMD 威訊聯(lián)合	RFMD
RF5176PCBA	文件：169.89 Kbytes Page：6 Pages	3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER Product Description The RF5176 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 文件：169.89 Kbytes 頁數(shù)：6 Pages	RFMD 威訊聯(lián)合	RFMD
RF5184	文件：82.67 Kbytes Page：8 Pages	DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE Product Description The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in W-CDMA handheld digital cellu 文件：82.67 Kbytes 頁數(shù)：8 Pages	RFMD 威訊聯(lián)合	RFMD
RF5184PCBA-410	文件：82.67 Kbytes Page：8 Pages	DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE Product Description The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in W-CDMA handheld digital cellu 文件：82.67 Kbytes 頁數(shù)：8 Pages	RFMD 威訊聯(lián)合	RFMD
RF5187	文件：50.08 Kbytes Page：6 Pages	LOW POWER LINEAR AMPLIFIER Product Description The RF5187 is a highly-linear, low-power amplifier IC. It has been designed for use as the driver RF amplifier in applications such as W-CDMA basestations. The RF5187 requires an input and output matching network and power supply feed line. The device is manufactured on an a 文件：50.08 Kbytes 頁數(shù)：6 Pages	RFMD 威訊聯(lián)合	RFMD
RF5187PCBA	文件：50.08 Kbytes Page：6 Pages	LOW POWER LINEAR AMPLIFIER Product Description The RF5187 is a highly-linear, low-power amplifier IC. It has been designed for use as the driver RF amplifier in applications such as W-CDMA basestations. The RF5187 requires an input and output matching network and power supply feed line. The device is manufactured on an a 文件：50.08 Kbytes 頁數(shù)：6 Pages	RFMD 威訊聯(lián)合	RFMD

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技術(shù)參數(shù)

封裝：
TO-252
包裝數(shù)量：
2500
最小獨立包裝數(shù)量：
2500
包裝形態(tài)：
Taping
RoHS：
Yes
Configuration：
Single
Package Code：
TO-252 (DPAK)
Package(JEITA)：
SC-63
Mounting Style：
Surface mount
Number of terminal：
3
VRM[V]：
200
Reverse Voltage VR[V]：
200
Average Rectified Forward Current IO[A]：
5
IFSM[A]：
40
Forward Voltage VF(Max.)[V]：
0.92
IF @ Forward Voltage [A]：
5
Reverse Current IR(Max.)[mA]：
0.001
VR @ Reverse Current [V]：
200
trr(Max.)[ns]：
25
IF @ trr [mA]：
500
IR @ trr [A]：
1
Storage Temperature (Min.)[°C]：
-55
Storage Temperature (Max.)[°C]：
150
Package Size [mm]：
6.6x10 (t=2.4)

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市粵駿騰電子科技有限公司	RF50107	WU	24+	NA	6399	大批量供應(yīng)優(yōu)勢庫存熱賣	詢價
深圳市斌能達電子科技有限公司	RF5110G	QORVO	24+	QFN-16	6000	全新原裝深圳倉庫現(xiàn)貨有單必成	詢價
諦輝(北京/上海/青島 )電子科技有限公司	RF5111TR7	RF	25+	標(biāo)準(zhǔn)封裝	18000	原廠直接發(fā)貨進口原裝	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	RF5187TR7	RFMD	23+	SOIC-8	5000	原裝正品,假一罰十	詢價
深圳市卓越微芯電子有限公司	RF5C789	RICOH	25+	QFP	3000	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市力拓輝電子有限公司	RF5187	RFMD	22+	SOP8	5000	只做原裝鄙視假貨15118075546	詢價
深圳市賽芯源科技有限公司	RF5622TR7	RFMD	19+	QFN	16200	原裝正品,現(xiàn)貨特價	詢價
深圳市澳億芯電子科技有限公司	RF505B6STL	ROHM	25+	TO-252	10000	現(xiàn)貨	詢價
深圳市粵科源興科技有限公司	RF5218	ENTROPIC	13+		2862	原裝分銷	詢價
深圳市凌旭科技有限公司	RF5110GTR7	QORVO	21+	QFN-16	2450	只做原裝,絕對現(xiàn)貨,原廠代理商渠道,可加微信查詢價	詢價

更多RF5供應(yīng)商更新時間2026-1-19 13:27:00

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