| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
3V GSM POWER AMPLIFIER Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ 文件:169.37 Kbytes 頁(yè)數(shù):12 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V GSM POWER AMPLIFIER Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular eq 文件:233.55 Kbytes 頁(yè)數(shù):18 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V GSM POWER AMPLIFIER Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular eq 文件:233.55 Kbytes 頁(yè)數(shù):18 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V GSM POWER AMPLIFIER Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equ 文件:169.37 Kbytes 頁(yè)數(shù):12 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V DCS POWER AMPLIFIER Product Description The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cell 文件:171 Kbytes 頁(yè)數(shù):14 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V DCS POWER AMPLIFIER Product Description The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cell 文件:171 Kbytes 頁(yè)數(shù):14 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi 文件:274.69 Kbytes 頁(yè)數(shù):10 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Trans 文件:275.03 Kbytes 頁(yè)數(shù):12 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Trans 文件:275.03 Kbytes 頁(yè)數(shù):12 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transi 文件:274.69 Kbytes 頁(yè)數(shù):10 Pages | RFMD 威訊聯(lián)合 | RFMD |
技術(shù)參數(shù)
- 封裝:
TO-252
- 包裝數(shù)量:
2500
- 最小獨(dú)立包裝數(shù)量:
2500
- 包裝形態(tài):
Taping
- RoHS:
Yes
- Configuration:
Single
- Package Code:
TO-252 (DPAK)
- Package(JEITA):
SC-63
- Mounting Style:
Surface mount
- Number of terminal:
3
- VRM[V]:
200
- Reverse Voltage VR[V]:
200
- Average Rectified Forward Current IO[A]:
5
- IFSM[A]:
40
- Forward Voltage VF(Max.)[V]:
0.92
- IF @ Forward Voltage [A]:
5
- Reverse Current IR(Max.)[mA]:
0.001
- VR @ Reverse Current [V]:
200
- trr(Max.)[ns]:
25
- IF @ trr [mA]:
500
- IR @ trr [A]:
1
- Storage Temperature (Min.)[°C]:
-55
- Storage Temperature (Max.)[°C]:
150
- Package Size [mm]:
6.6x10 (t=2.4)
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ROHM/羅姆 |
24+ |
SOT252 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
WU |
24+ |
NA |
6399 |
大批量供應(yīng)優(yōu)勢(shì)庫(kù)存熱賣 |
詢價(jià) | ||
QORVO |
24+ |
N/A |
1525223 |
原裝原裝原裝 |
詢價(jià) | ||
QORVO |
24+ |
QFN-16 |
6000 |
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成 |
詢價(jià) | ||
RFMD |
23+ |
SOIC-8 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
ENTROPIC |
23+ |
QFN68 |
6500 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
RFMD |
22+ |
SOP8 |
5000 |
只做原裝鄙視假貨15118075546 |
詢價(jià) | ||
N/A |
25+ |
QFP |
2500 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
ROHM |
25+ |
TO-252 |
10000 |
現(xiàn)貨 |
詢價(jià) | ||
RICOH |
25+ |
QFP |
3000 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
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