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          首頁(yè) >RF212>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          RF2126_07

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

          文件:184.34 Kbytes 頁(yè)數(shù):10 Pages

          RFMD

          威訊聯(lián)合

          RF2126PCBA

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

          文件:57.01 Kbytes 頁(yè)數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2126PCK

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

          文件:184.34 Kbytes 頁(yè)數(shù):10 Pages

          RFMD

          威訊聯(lián)合

          RF2127

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req

          文件:63.95 Kbytes 頁(yè)數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2127PCBA

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req

          文件:63.95 Kbytes 頁(yè)數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2128

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

          文件:60.95 Kbytes 頁(yè)數(shù):4 Pages

          RFMD

          威訊聯(lián)合

          RF2128P

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

          文件:134.25 Kbytes 頁(yè)數(shù):4 Pages

          RFMD

          威訊聯(lián)合

          RF2128PCBA

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

          文件:60.95 Kbytes 頁(yè)數(shù):4 Pages

          RFMD

          威訊聯(lián)合

          RF2128PPCBA

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2128P is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and

          文件:134.25 Kbytes 頁(yè)數(shù):4 Pages

          RFMD

          威訊聯(lián)合

          RF2129

          3V, 2.5GHZ LINEAR POWER AMPLIFIER

          Product Description The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

          文件:83.94 Kbytes 頁(yè)數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          詳細(xì)參數(shù)

          • 型號(hào):

            RF212

          • 功能描述:

            Image-Reject Front End for Dual or Tri-Band GSM Applications

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          更多RF212供應(yīng)商 更新時(shí)間2026-1-19 16:01:00
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