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          首頁 >RF212>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          RF212

          Image-Reject Front End for Dual or Tri-Band GSM Applications

          [Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

          文件:89.58 Kbytes 頁數(shù):9 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          RF212

          Image-Reject Front End for Dual or Tri-Band GSM Applications

          Synaptics

          新思

          RF212-11

          Image-Reject Front End for Dual or Tri-Band GSM Applications

          [Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

          文件:89.58 Kbytes 頁數(shù):9 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          RF212-21

          Image-Reject Front End for Dual or Tri-Band GSM Applications

          [Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

          文件:89.58 Kbytes 頁數(shù):9 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          RF2125

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

          文件:104.66 Kbytes 頁數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2125P

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

          文件:51.51 Kbytes 頁數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2125PCBA

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

          文件:104.66 Kbytes 頁數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2125PPCBA

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

          文件:51.51 Kbytes 頁數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2126

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

          文件:57.01 Kbytes 頁數(shù):6 Pages

          RFMD

          威訊聯(lián)合

          RF2126

          HIGH POWER LINEAR AMPLIFIER

          Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO

          文件:184.34 Kbytes 頁數(shù):10 Pages

          RFMD

          威訊聯(lián)合

          詳細參數(shù)

          • 型號:

            RF212

          • 功能描述:

            Image-Reject Front End for Dual or Tri-Band GSM Applications

          供應商型號品牌批號封裝庫存備注價格
          RFMD
          17+
          器件和集成
          6200
          100%原裝正品現(xiàn)貨
          詢價
          BB
          25+
          DIP
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          HARRIS
          24+
          SMD
          5000
          公司存貨
          詢價
          RF
          23+
          高頻管
          200
          專營高頻管模塊,全新原裝!
          詢價
          RFMD
          23+
          SOP8
          5000
          原裝正品,假一罰十
          詢價
          RFMD
          16+
          SOP8
          8000
          原裝現(xiàn)貨請來電咨詢
          詢價
          RFMD
          24+
          SOP8
          5825
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          RFMD
          2016+
          SOP8
          2853
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          N/A
          25+
          N/A
          3791
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          RFMD
          24+
          SOP8
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          更多RF212供應商 更新時間2026-1-19 8:31:00
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