HIGH EFFICIENCY 2V POWER AMPLIFIER

Product Description The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digita

文件：82.1 Kbytes 頁數(shù)：8 Pages

RFMD

威訊聯(lián)合

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications ● Ultra-small package, suited to very high density mounting ● ncorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever m

文件：161.06 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

317.5 MHz SAW Resonator

文件：100.53 Kbytes 頁數(shù)：2 Pages

RFM

1.55A CMOS Low Dropout Voltage Regulator

Description The SSC2119 positive,linear regulators feature low quiescent current (45mA typ.) with low dropout voltage, making them ideal for battery applications. Output voltage are set at the factory and trimmed to 1.5 accuracy.These rugged devices have both Thermal Shutdown and Current Fold-bac

文件：1.27738 Mbytes 頁數(shù)：7 Pages

SECOS

喜可士