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          首頁 >RF210>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          RF2103P

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

          文件:191.86 Kbytes 頁數(shù):10 Pages

          RFMD

          威訊聯(lián)合

          RF2103PPCBA

          MEDIUM POWER LINEAR AMPLIFIER

          Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

          文件:191.86 Kbytes 頁數(shù):10 Pages

          RFMD

          威訊聯(lián)合

          RF2104

          MEDIUM POWER AMPLIFIER

          Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

          文件:112.62 Kbytes 頁數(shù):8 Pages

          RFMD

          威訊聯(lián)合

          RF2104PCBA-H

          MEDIUM POWER AMPLIFIER

          Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

          文件:112.62 Kbytes 頁數(shù):8 Pages

          RFMD

          威訊聯(lián)合

          RF2104PCBA-L

          MEDIUM POWER AMPLIFIER

          Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

          文件:112.62 Kbytes 頁數(shù):8 Pages

          RFMD

          威訊聯(lián)合

          RF2105

          HIGH POWER LINEAR UHF AMPLIFIER

          Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

          文件:70.27 Kbytes 頁數(shù):8 Pages

          RFMD

          威訊聯(lián)合

          RF2105L

          HIGH POWER LINEAR UHF AMPLIFIER

          Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

          文件:70.27 Kbytes 頁數(shù):8 Pages

          RFMD

          威訊聯(lián)合

          RF2105LPCBA

          HIGH POWER LINEAR UHF AMPLIFIER

          Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

          文件:70.27 Kbytes 頁數(shù):8 Pages

          RFMD

          威訊聯(lián)合

          RF210A

          Dual-Band, Image-Reject Downconverters For GSM Applications

          The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices are optimized for dual-band use in GSM900/DCS1800 or GSM 900/PCS1900 applications. The devices include tw

          文件:77.94 Kbytes 頁數(shù):8 Pages

          CONEXANT

          RF210B

          Dual-Band, Image-Reject Downconverters For GSM Applications

          The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices are optimized for dual-band use in GSM900/DCS1800 or GSM 900/PCS1900 applications. The devices include tw

          文件:77.94 Kbytes 頁數(shù):8 Pages

          CONEXANT

          詳細(xì)參數(shù)

          • 型號(hào):

            RF210

          • 制造商:

            RFMD

          • 制造商全稱:

            RF Micro Devices

          • 功能描述:

            MEDIUM POWER AMPLIFIER

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          RFMD
          18+
          SOP16
          85600
          保證進(jìn)口原裝可開17%增值稅發(fā)票
          詢價(jià)
          -
          23+
          11200
          原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
          詢價(jià)
          RFMD
          2023+
          SSOP14
          5800
          進(jìn)口原裝,現(xiàn)貨熱賣
          詢價(jià)
          RFMD
          24+
          con
          10000
          查現(xiàn)貨到京北通宇商城
          詢價(jià)
          RFMD
          25+
          SOP12
          54658
          百分百原裝現(xiàn)貨 實(shí)單必成
          詢價(jià)
          24+
          SOP
          14
          詢價(jià)
          RFMD
          TSSOP20
          686
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          CONEXANT
          25+
          ETSSOP20鐵底
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          RFMD
          2022+
          12500
          全新原裝 貨期兩周
          詢價(jià)
          RFMD
          23+
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          更多RF210供應(yīng)商 更新時(shí)間2026-1-19 15:30:00
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