絲印：QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SM

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ONSEMI

安森美半導體

絲?。?strong>QR；Package：SMB；400 Watt Peak Power Zener Transient Voltage Suppressors

400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA

文件：148.71 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導體

絲印：QR；Package：ATV；Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件：43.82 Kbytes 頁數(shù)：1 Pages

ROHM

羅姆

絲印：QR；Package：ATV；Power Transistor (-120V , -1.5A)

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

文件：73.12 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>QR；Package：ATV；Power Transistor (-60V, -3A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. ● Structure Epitaxial planar type PNP silicon transistor

文件：147.11 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?strong>QR；Package：SOT-89；MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it employs plastic surface mount type package (SOT-89). FEATURES

文件：60.08 Kbytes 頁數(shù)：8 Pages

NEC

瑞薩

絲?。?strong>QR；Package：ATV；Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

文件：147 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

絲?。?strong>QR；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V,

文件：400.42 Kbytes 頁數(shù)：16 Pages

ROHM

羅姆

絲?。?strong>QR；Package：SSOP5；Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V,

文件：308.66 Kbytes 頁數(shù)：12 Pages

ROHM

羅姆

絲?。?strong>QR；Package：SSOP5；Delay Time Controlled by external Capacitor, Two output types

Description ROHM’s BD52□□G/FVE and BD53□□G/FVE series are highly accurate, low current consumption reset IC series with a built-in delay circuit. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V,

文件：400.42 Kbytes 頁數(shù)：16 Pages

ROHM

羅姆