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          首頁(yè) >PTF2>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          PTF2

          Strong Lead Attachment

          文件:613.8 Kbytes 頁(yè)數(shù):2 Pages

          LSTD

          萊爾德

          PTF210101M

          High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz

          Description The PTF210101M is an unmatched 10-watt GOLDMOS? FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features ? Typical WCDMA performance - Average ou

          文件:276.3 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF210301

          LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

          Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two–carrier WCDMA performance - Average out

          文件:337.85 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF210301A

          LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

          Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two–carrier WCDMA performance - Average out

          文件:337.85 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF210301E

          LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

          Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical two–carrier WCDMA performance - Average out

          文件:337.85 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF210451

          LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

          Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier WCDMA performance

          文件:406.9 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF210451E

          LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

          Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier WCDMA performance

          文件:406.9 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF210901

          LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

          Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier 3GPP WCDMA perfo

          文件:266.34 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF210901E

          LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

          Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Internal matching for wideband performance ? Typical two–carrier 3GPP WCDMA perfo

          文件:266.34 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF211301

          LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

          Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal

          文件:449.03 Kbytes 頁(yè)數(shù):9 Pages

          INFINEON

          英飛凌

          技術(shù)參數(shù)

          • VR[V]::

            100

          • IF[A]::

            20

          • Ifsm[A]::

            180

          • IR[mA]::

            30

          • 封裝形式::

            TO-220F

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          INFINEON
          05/06+
          1426
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢(xún)價(jià)
          INFINEON
          23+
          高頻管
          600
          專(zhuān)營(yíng)高頻管模塊,全新原裝!
          詢(xún)價(jià)
          INFINEON
          25+
          陶瓷高頻管
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢(xún)價(jià)
          24+
          3000
          公司存貨
          詢(xún)價(jià)
          FREESCA
          25+
          NA
          135
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢(xún)價(jià)
          n
          24+
          n
          5989
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
          詢(xún)價(jià)
          FREESCALE
          24+
          NA
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢(xún)價(jià)
          MOTOROLA
          25+
          SMD
          2789
          全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)!
          詢(xún)價(jià)
          OmronAutomation
          57
          全新原裝 貨期兩周
          詢(xún)價(jià)
          INFINEON
          24+
          SMD
          5500
          長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談
          詢(xún)價(jià)
          更多PTF2供應(yīng)商 更新時(shí)間2026-1-20 16:11:00
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