650 V, 10 A low VF power Schottky silicon carbide diode

Features ? No or negligible reverse recovery ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? Operating Tj from -40 °C to 175 °C ? D2PAK HV creepage distance (anode to cathode) = 5.38 mm min. ? ECOPACK2 compliant component

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650 V 碳化硅功率肖特基二極管

碳化硅（SiC）二極管是一款超高性能的功率肖特基二極管，是使用碳化硅基板制造的。寬帶隙材料可用于設(shè)計(jì)650V額定電壓的肖特基二極管。由于肖特基結(jié)構(gòu)的關(guān)系，關(guān)斷時(shí)不存在反向恢復(fù)現(xiàn)象，且振鈴模式幾乎可忽略。最小的容性關(guān)斷行為受溫度影響小。\n\n ST碳化硅（SiC）二極管特別適用于PFC應(yīng)用，可在硬開關(guān)條件下大幅提升效能。其高耐正向浪涌電流能力可確保在瞬態(tài)期間提供良好的耐受性。 ? 無反向恢復(fù)，或反向恢復(fù)可忽略 \n? 開關(guān)行為受溫度影響小 \n? 專為PFC應(yīng)用設(shè)計(jì) \n? 高耐正向浪涌電流能力 \n? 工作結(jié)溫，范圍從-40 °C 到 175 °C \n? ECOPACK?2 兼容組件;

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650 V, 10 A low VF power Schottky silicon carbide diode

Features ? No or negligible reverse recovery ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? Operating Tj from -40 °C to 175 °C ? D2PAK HV creepage distance (anode to cathode) = 5.38 mm min. ? ECOPACK2 compliant component

文件：395.95 Kbytes 頁數(shù)：13 Pages

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650 V, 10 A power Schottky silicon carbide diode

Features ? Less than 1 mm height package ? High creepage package ? No or negligible reverse recovery ? Temperature independent switching behavior ? High forward surge capability ? Very low drop forward voltage ? Power efficient product ? ECOPACK2 compliant component Description This 10

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650 V, 10 A low VF power Schottky silicon carbide diode

Features ? No or negligible reverse recovery ? Switching behavior independent of temperature ? Dedicated to PFC applications ? High forward surge capability ? Operating Tj from -40 °C to 175 °C ? D2PAK HV creepage distance (anode to cathode) = 5.38 mm min. ? ECOPACK2 compliant component

文件：395.95 Kbytes 頁數(shù)：13 Pages

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絲?。?a target="_blank" title="Marking" href="/psc10065dy/marking.html">PSC10065DY；Package：TO-220AC；Automotive 650 V power Schottky silicon carbide diode

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絲?。?a target="_blank" title="Marking" href="/psc10065gy/marking.html">PSC10065GY；Package：D2PAK；Automotive 650 V power Schottky silicon carbide diode

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Automotive 650 V power Schottky silicon carbide diode

文件：542.32 Kbytes 頁數(shù)：12 Pages

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650V 10A功率肖特基碳化硅二極管

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ? Less than 1 mm height package \n? High creepage package \n? No or negligible reverse recovery \n? Temperature independent switching behavior \n? High forward surge capability \n? Very low drop forward voltage \n? Power efficient product \n? ECOPACK2 compliant component;

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汽車用650 V、10 A碳化硅功率肖特基二極管

碳化硅（SiC）二極管是一款超高性能的功率肖特基二極管，是使用碳化硅基板制造的。寬帶隙材料可用于設(shè)計(jì)650V額定電壓的肖特基二極管。由于肖特基結(jié)構(gòu)的關(guān)系，關(guān)斷時(shí)不存在反向恢復(fù)現(xiàn)象，且振鈴模式幾乎可忽略。最小的容性關(guān)斷行為受溫度影響小。\n\n ST碳化硅（SiC）二極管特別適用于PFC應(yīng)用，可在硬開關(guān)條件下大幅提升效能。其高耐正向浪涌電流能力可確保在瞬態(tài)期間提供良好的耐受性。 ? 符合AEC-Q101標(biāo)準(zhǔn) \n? 無反向恢復(fù)，或反向恢復(fù)可忽略 \n? 開關(guān)行為受溫度影響小 \n? 專為PFC應(yīng)用設(shè)計(jì) \n? 高耐正向浪涌電流能力 \n? 具有PPAP功能（符合生產(chǎn)件批準(zhǔn)程序） \n? 工作結(jié)溫，范圍從-40 °C 到 175 °C \n? ECOPACK?2 兼容組件;

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