N-channel enhancement mode field effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS?1 technology. Features ■ TrenchMOS? technology ■ Logic level compatible. Applications ■ General purpose switching ■ Switched mode power supplies.

文件：274.27 Kbytes 頁數(shù)：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Suitable for

文件：378.83 Kbytes 頁數(shù)：12 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel enhancement mode field effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS?1 technology. Features ■ TrenchMOS? technology ■ Logic level compatible. Applications ■ General purpose switching ■ Switched mode power supplies.

文件：274.27 Kbytes 頁數(shù)：13 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

恩XP