isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：370.98 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.93 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Po

文件：52.23 Kbytes 頁數(shù)：7 Pages

PHI

PHI

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP30NQ15T is supplied in the S

文件：98.02 Kbytes 頁數(shù)：9 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

文件：265.18 Kbytes 頁數(shù)：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 29A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 63mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.15 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 150 V (D-S) MOSFET

FEATURES ? TrenchFET? power MOSFET ? Package with low thermal resistance ? 100 Rg and UIS tested

文件：1.00052 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導體

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

文件：817 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

包裝：散裝 類別：電路保護 TVS - 二極管 描述：TVS DIODE

MICROCHIP

微芯科技

N-channel TrenchMOS standard level FET

General description\nStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic\npackage using TrenchMOS technology. This product is designed and qualified for use in\ncomputing, communications, consumer and industrial applications only.Features and benefits\nLow conduction

恩XP