TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supp

文件：51.49 Kbytes 頁(yè)數(shù)：6 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.97 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.23 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

N-Channel 30 V (D-S) MOSFET

文件：1.10923 Mbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

4.5V Drive Nch MOSFET

文件：1.12555 Mbytes 頁(yè)數(shù)：7 Pages

ROHM

羅姆