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          首頁 >PHP>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHP101NQ04T

          N-channel TrenchMOS standard level FET

          Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS? technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

          文件:94.98 Kbytes 頁數(shù):13 Pages

          PHI

          PHI

          PHI

          PHP101NQ04T

          N-channel TrenchMOS standard level FET

          General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

          文件:189.15 Kbytes 頁數(shù):13 Pages

          恩XP

          恩XP

          PHP1025

          P-channel enhancement mode MOS transistor

          DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES ? Very low RDSon at low threshold ? High-speed switching ? No secondary breakdown ? Direct interface to C-MOS, TTL, etc. APPLICATIONS ? Power management ? DC-DC converters ? Gene

          文件:51.87 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          PHP1035

          P-channel enhancement mode MOS transistor

          DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES ? Very low RDSon ? High-speed switching ? No secondary breakdown ? Direct interface to C-MOS, TTL, etc. APPLICATIONS ? Power management ? DC-DC converters ? General purpose switc

          文件:51.79 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          PHP108NQ03LT

          TrenchMOS logic level FET

          Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). Features ■Logic level compatible ■

          文件:269.45 Kbytes 頁數(shù):14 Pages

          PHI

          PHI

          PHI

          PHP108NQ03LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.29 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP109

          P-channel enhancement mode MOS transistor

          DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES ? High-speed switching ? No secondary breakdown ? Very low on-resistance. APPLICATIONS ? Motor and actuator driver ? Power management ? Synchronized rectification.

          文件:101 Kbytes 頁數(shù):12 Pages

          PHI

          PHI

          PHI

          PHP10N10E

          PowerMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

          文件:71.22 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          PHP10N10E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:371.5 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP10N40

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·Switch-mode Power Supplies ·Power Motor Control

          文件:372.05 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • 技術(shù)/工藝:

            薄膜

          • 阻值:

            10Ω

          • 精度:

            ±0.1%

          • 功率:

            1W

          • 溫度系數(shù):

            ±25ppm/℃

          • 工作溫度:

            cL

          • 安裝類型:

            SMT

          • 長x寬/尺寸:

            3.20 x 1.60mm

          • 封裝/外殼:

            bE

          • 引腳數(shù):

            2Pin

          • 是否無鉛:

            Yes

          • 系列:

            PHP

          • 等級:

            消費(fèi)級

          • 原始制造商:

            Vishay Intertechnology

          • 原產(chǎn)國家:

            America

          • 認(rèn)證信息:

            RoHS

          • 存儲溫度:

            cL

          • 元件生命周期:

            Active

          • 高度:

            0.83mm

          • 額定電壓:

            200V

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          更多PHP供應(yīng)商 更新時間2026-1-20 15:01:00
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