絲印：PHP；TVS Diodes Surface Mount ? 3000W > SMDJ series

文件：1.0113 Mbytes 頁數(shù)：6 Pages

LITTELFUSE

力特

絲?。?strong>PHP；Package：DO-214AB；TRANSIENT VTAGE SUPPRESSOR

文件：1.18301 Mbytes 頁數(shù)：5 Pages

CHENDA

辰達(dá)半導(dǎo)體

絲?。?strong>PHP；Package：SMC；The SMDJ series is designed specifically to protect

文件：482.48 Kbytes 頁數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲?。?strong>PHP；Package：SMC；The SMDJ series is designed specifically to protect

文件：482.48 Kbytes 頁數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low

文件：313.33 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conductio

文件：198.51 Kbytes 頁數(shù)：13 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 75A@ TC=25℃ Drain Source Voltage -VDSS= 30V(Min) Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.13 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TrenchMOS logic level FET

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS? technology. Product availability: PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK) Features ■ Low gate charge ■ Low on-state resistance. Applications ■ Optimized as

文件：279.02 Kbytes 頁數(shù)：13 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：333.22 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.82 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電