PowerMOS transistors FREDFET, Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and mo

文件：91.18 Kbytes 頁數(shù)：10 Pages

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PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.37 Kbytes 頁數(shù)：2 Pages

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PowerMOS transistors FREDFET, Avalanche energy rated

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PowerMOS transistors FREDFET, Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and mo

文件：91.18 Kbytes 頁數(shù)：10 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.95 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistors FREDFET, Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and mo

文件：91.18 Kbytes 頁數(shù)：10 Pages

PHI

PHI