絲?。?strong>PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1? Wide operating voltage: 1.5 V to 10 V ? Nano supply current: 300 nA (Typ), 700 nA (Max) ? Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.20703 Mbytes 頁數(shù)：46 Pages

TI

德州儀器

絲?。?strong>PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1? Wide operating voltage: 1.5 V to 10 V ? Nano supply current: 300 nA (Typ), 700 nA (Max) ? Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.33121 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

絲?。?strong>PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1? Wide operating voltage: 1.5 V to 10 V ? Nano supply current: 300 nA (Typ), 700 nA (Max) ? Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.3304 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

絲?。?strong>PH19；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

文件：1.76236 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

Wireless Bipolar Power Transistor 33W, 1930-1900 MHz

Features ? NPN silicon microwave power transistor ? Common emitter class AB operation ? Internal input and output impedance matching ? Diffused emitter ballasting ? Gold metallization system ? RoHS Compliant

文件：136.04 Kbytes 頁數(shù)：2 Pages

MA-COM

Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz

Features ? NPN Silicon Microwave Power Transistor ? Common Emitter Class AB Operation ? Internal Input and Output Impedance Matching ? Diffused Emitter Ballasting ? Gold Metallization System

文件：133.38 Kbytes 頁數(shù)：2 Pages

MACOM

Wireless Power Transistor 90 Watts, 1930-1990 MHz

Description MA/COMs PH1920-90 is a high power transistor designed for use in wireless communications systems. The PH1920-90 is capable of operating at an output power of 90 W CW, and is currently being used in both TDMA and CDMA applications in the 1.8 GHz to 2.0 GHz frequency range. Features ?

文件：48.36 Kbytes 頁數(shù)：1 Pages

MACOM

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold ■ Low on-state resistance ■ 175 °C rated ■ Surface-mounted package Applications ■ DC-to-DC converters ■ General pur

文件：77.38 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conductio

文件：166.99 Kbytes 頁數(shù)：12 Pages

恩XP

WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ

文件：146.93 Kbytes 頁數(shù)：2 Pages

MACOM