Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold ■ Low on-state resistance ■ 175 °C rated ■ Surface-mounted package Applications ■ DC-to-DC converters ■ General pur

文件：77.38 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conductio

文件：166.99 Kbytes 頁數(shù)：12 Pages

恩XP

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

恩XP

NATIONAL SEMICONDUCTOR SIMPLE SWITCHER APPLICATIONS

文件：1.15563 Mbytes 頁數(shù)：2 Pages

RENCO

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：853.95 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

N-Channel 60 V (D-S) MOSFET

文件：963.82 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體