絲?。?strong>PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1? Wide operating voltage: 1.5 V to 10 V ? Nano supply current: 300 nA (Typ), 700 nA (Max) ? Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.20703 Mbytes 頁數(shù)：46 Pages

TI

德州儀器

絲?。?strong>PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1? Wide operating voltage: 1.5 V to 10 V ? Nano supply current: 300 nA (Typ), 700 nA (Max) ? Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.33121 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

絲印：PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

1 Features 1? Wide operating voltage: 1.5 V to 10 V ? Nano supply current: 300 nA (Typ), 700 nA (Max) ? Fixed threshold voltage (VIT-) – Threshold from 1.6 V to 4.9 V in 0.1-V steps – High accuracy: 1 (Typ), 1.5 (Max) – Built-in hysteresis (VIT+) – 1.6 V

文件：1.3304 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

絲?。?strong>PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

文件：1.76236 Mbytes 頁數(shù)：44 Pages

TI

德州儀器

絲?。?strong>PH18；Package：SOT-23；TPS3840 Nano Power, High Input Voltage Supervisor With MR and Programmable Delay

文件：1.52344 Mbytes 頁數(shù)：40 Pages

TI

德州儀器

Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz

Features ? Designed for cellular base station applications ? -30 dBc typ. 3rd IMD at 10 W PEP ? Common emitter configuration ? Internal input impedance matching ? Diffused emitter ballasting

文件：202.11 Kbytes 頁數(shù)：3 Pages

MA-COM

Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz

Features ? Designed for Cellular Base Station Applications ? -30 dBc Typ. 3rd IMD at 10 Watt PEP ? Common Emitter Configuration ? Internal Input Impedance Matching ? Diffused Emitter Ballasting

文件：203.41 Kbytes 頁數(shù)：3 Pages

MACOM

Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz

Wireless Bipolar Power Transistor, 15W 1.78 - 1.90 GHz Features ? NPN Silicon Microwave Power Transistor ? Designed for Linear Amplifier Applications ? Class AB: -34 dBc Typ 3rd IMD at 15Watts PEP ? Class A:+48 dBm Typ 3rd Order lnrercept Point . ? Common Emitter Configuration ? Internal In

文件：229.53 Kbytes 頁數(shù)：3 Pages

MACOM

Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz

Features ? NPN silicon microwave power transistor ? Designed for linear amplifier applications ? Class AB: -34 dBc typ. 3rd IMD at 15 W PEP ? Class A: +48 dBm typ. 3rd order intercept point - ? Common emitter configuration ? Internal input impedance matching ? Diffused emitter ballasting ?

文件：190.53 Kbytes 頁數(shù)：3 Pages

MA-COM

Wireless Bipolar Power Transistor

Features ? Designed for cellular base station applications ? Class AB: -34 dBc typ. 3rd IMD at 2 W PEP ? Class A: +43 dBm typ. 3rd order intercept point ? Common emitter configuration ? Internal input impedance matching ? Diffused emitter ballasting

文件：196.3 Kbytes 頁數(shù)：4 Pages

MA-COM