RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：47.65 Kbytes 頁數(shù)：4 Pages

STMICROELECTRONICS

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：506.28 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：506.28 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：506.28 Kbytes 頁數(shù)：18 Pages

STMICROELECTRONICS

意法半導體

30W 28V HF - 1GHz LDMOS晶體管，PSO-10RF塑料封裝

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity a ? Excellent thermal stability \n? Common source configuration \n? POUT = 30 W with 14dB gain @ 945 MHz / 28 V \n? New RF plastic package;

ST

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Package：PowerSO-10 裸露底部焊盤；包裝：帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 945MHZ PWRSO-10

STMICROELECTRONICS

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Package：PowerSO-10 裸露底部焊盤；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 945MHZ PWRSO10

STMICROELECTRONICS

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