PD55003-E中文資料3W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封裝數(shù)據(jù)手冊(cè)ST規(guī)格書(shū)

描述 Description

The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.

The PD55003’s superior linearity performance makes it an ideal solution for car mobile radios.

The PowerSO-10RF plastic package is designed for high reliability, and is the first JEDEC-approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.

Mounting recommendations are provided in application note AN1294, available on www.st.com.

特性 Features

? Excellent thermal stability
? Common source configuration
? POUT= 3 W with 17dB gain @ 500 MHz / 12.5 V

簡(jiǎn)介

PD55003-E屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由ST制造生產(chǎn)的PD55003-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。