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首頁 >PD55003-E>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
PD55003-E	文件：468.27 Kbytes Page：29 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent 文件：468.27 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003-E	文件：473.99 Kbytes Page：29 Pages	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind 文件：473.99 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003-E_V01	文件：473.99 Kbytes Page：29 Pages	RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 17dB gain @ 500 MHz / 12.5 V Description The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and ind 文件：473.99 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003-E-E	文件：468.27 Kbytes Page：29 Pages	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The PD55003-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003 boasts the excellent 文件：468.27 Kbytes 頁數(shù)：29 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
PD55003-E	文件：300 bytes Page：1 Pages	3W 12.5V 500MHz LDMOS，PowerSO-10RF塑料封裝 The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearit ? Excellent thermal stability \n? Common source configuration \n? POUT= 3 W with 17dB gain @ 500 MHz / 12.5 V;	ST 意法半導(dǎo)體	ST
PD55003-E	文件：100 bytes Page：1 Pages	Package：PowerSO-10 裸露底部焊盤；包裝：散裝類別：分立半導(dǎo)體產(chǎn)品晶體管 - FET，MOSFET - 射頻描述：FET RF 40V 500MHZ PWRSO10	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

產(chǎn)品屬性

產(chǎn)品編號(hào)：
PD55003-E
制造商：
STMicroelectronics
類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻
包裝：
散裝
晶體管類型：
LDMOS
頻率：
500MHz
增益：
17dB
額定電流（安培）：
2.5A
功率 - 輸出：
3W
封裝/外殼：
PowerSO-10 裸露底部焊盤
供應(yīng)商器件封裝：
10-PowerSO
描述：
FET RF 40V 500MHZ PWRSO10

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市科雨電子有限公司	PD55003-E	ST(意法)	25+	PowerSO-10 裸露底部焊盤	10000	就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!	詢價(jià)
深圳市旺財(cái)半導(dǎo)體有限公司	PD55003-E	ST	23+		1688	房間現(xiàn)貨庫存:QQ:373621633	詢價(jià)
深圳市豪邁興電子有限公司	PD55003-E	ST(意法)	24+	PowerSO-10 裸露底部焊盤	5114	只做原裝現(xiàn)貨假一罰十!價(jià)格最低!只賣原裝現(xiàn)貨	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	PD55003-E	ST	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市得捷芯城科技有限公司	PD55003-E	ST(意法)	25+	PowerSO-10 裸露底部焊盤	11543	原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開票。	詢價(jià)
深圳市高捷芯城科技有限公司	PD55003-E	ST(意法)	25+	PowerSO-10 裸露底部焊盤	11543	原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開票。	詢價(jià)
深圳市朱博士電子科技有限公司	PD55003-E	ST	2432+		3200	訂貨在途實(shí)單價(jià)優(yōu)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	PD55003-E	ST	24+	PowerSO-10	484		詢價(jià)
深圳市振宏微科技有限公司	PD55003-E	ST	23+	原廠封裝	13528	振宏微原裝正品,假一罰百	詢價(jià)
深圳市百諾芯科技有限公司	PD55003-E	ST	23+	NA	2860	原裝正品代理渠道價(jià)格優(yōu)勢(shì)	詢價(jià)

更多PD55003-E供應(yīng)商更新時(shí)間2021-9-14 10:50:00

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