RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes 頁數(shù)：29 Pages

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

意法半導體

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes 頁數(shù)：29 Pages

STMICROELECTRONICS

意法半導體

RF Power LDMOS transistor

The PD54003L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial application. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the excellent gain, lineari Excellent thermal stability\nCommon source configuration\nP\nOUT=3 W mith 20dB gain@500 MHz\nNew leadless plastic package\nESD protection\nSupplied in tape and reel of 3 K units\nIn compliance with 2002/95/EC european directive;

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RF功率LDMOS晶體管

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity ? Excellent thermal stability \n? Common source configuration \n? POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V \n? New RF plastic package;

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RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

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Package：8-PowerVDFN；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANSISTOR RF 5X5 POWERFLAT

STMICROELECTRONICS

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Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANS RF N-CH FET POWERSO-10RF

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Package：PowerSO-10 裸露底部焊盤；包裝：帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 25V 500MHZ PWRSO-10

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