| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DIODE 文件：158.32 Kbytes 頁數(shù)：2 Pages | NI 恩艾 | NI | ||
DIODE 文件：158.32 Kbytes 頁數(shù)：2 Pages | NI 恩艾 | NI | ||
Diode 文件：847.67 Kbytes 頁數(shù)：5 Pages | KSS 京瓷 | KSS | ||
200A Avg 1600 Volts 文件：126.63 Kbytes 頁數(shù)：2 Pages | NIEC | NIEC | ||
DIODE 文件：126.63 Kbytes 頁數(shù)：2 Pages | NI 恩艾 | NI | ||
200A Avg 800 Volts 文件：83.83 Kbytes 頁數(shù)：1 Pages | NIEC | NIEC | ||
Diode 文件：611.99 Kbytes 頁數(shù)：5 Pages | KSS 京瓷 | KSS | ||
DIODE 文件：83.83 Kbytes 頁數(shù)：1 Pages | NI 恩艾 | NI | ||
15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linea ? Excellent thermal stability\n? Common source configuration\n? POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V? Plastic package\n? ESD protection\n? In compliance with the 2002/95/EC european directive; | ST 意法半導體 | ST | ||
射頻金屬氧化物半導體場效應(RF MOSFET)晶體管 RF power tran LdmoST N-chann | ST 意法半導體 | ST |
技術參數(shù)
- EStore Flag：
true
- New Product Introduction：
false
- Product Classification：
EPL
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NIEC |
23+ |
模塊 |
240 |
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢! |
詢價 | ||
24+ |
DIP22 |
1 |
自己現(xiàn)貨 |
詢價 | |||
SANKEN |
10+ |
主營模塊 |
200 |
全新原裝,絕對正品,現(xiàn)貨供應 |
詢價 | ||
STM |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
25+ |
DIP24 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | |||
ST |
24+ |
SMD |
5500 |
長期供應原裝現(xiàn)貨實單可談 |
詢價 | ||
ST |
23+ |
原廠封裝 |
13528 |
振宏微原裝正品,假一罰百 |
詢價 | ||
ST專家 |
25+23+ |
PowerSO-10R.F.(gullw |
29727 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ST專家 |
20+ |
PowerSO-10R.F.(gullw |
69052 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
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