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          首頁 >PD200>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PD200

          Plate Capacitors with Contoured Rim - Class 1 Ceramic

          文件:122.13 Kbytes 頁數(shù):3 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          PD20010-E

          RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

          文件:240.84 Kbytes 頁數(shù):13 Pages

          STMICROELECTRONICS

          意法半導體

          PD20010S-E

          RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

          文件:240.84 Kbytes 頁數(shù):13 Pages

          STMICROELECTRONICS

          意法半導體

          PD20010STR-E

          RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

          文件:240.84 Kbytes 頁數(shù):13 Pages

          STMICROELECTRONICS

          意法半導體

          PD20010TR-E

          RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

          Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

          文件:240.84 Kbytes 頁數(shù):13 Pages

          STMICROELECTRONICS

          意法半導體

          PD20012

          DIODE MODULE 200A/1200 to 1600V

          FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

          文件:204.86 Kbytes 頁數(shù):3 Pages

          NIEC

          PD20015C

          RF power transistor, LdmoST family

          Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen

          文件:155.35 Kbytes 頁數(shù):9 Pages

          STMICROELECTRONICS

          意法半導體

          PD20015-E

          RF power transistor, LdmoST family

          Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

          文件:352.27 Kbytes 頁數(shù):16 Pages

          STMICROELECTRONICS

          意法半導體

          PD20015S-E

          RF power transistor, LdmoST family

          Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

          文件:352.27 Kbytes 頁數(shù):16 Pages

          STMICROELECTRONICS

          意法半導體

          PD20015STR-E

          RF power transistor, LdmoST family

          Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

          文件:352.27 Kbytes 頁數(shù):16 Pages

          STMICROELECTRONICS

          意法半導體

          技術(shù)參數(shù)

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          供應商型號品牌批號封裝庫存備注價格
          NIEC
          23+
          模塊
          240
          全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
          詢價
          24+
          DIP22
          1
          自己現(xiàn)貨
          詢價
          SANKEN
          10+
          主營模塊
          200
          全新原裝,絕對正品,現(xiàn)貨供應
          詢價
          STM
          16+
          NA
          8800
          原裝現(xiàn)貨,貨真價優(yōu)
          詢價
          25+
          DIP24
          3629
          原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
          詢價
          ST
          24+
          SMD
          5500
          長期供應原裝現(xiàn)貨實單可談
          詢價
          ST
          23+
          原廠封裝
          13528
          振宏微原裝正品,假一罰百
          詢價
          ST專家
          25+23+
          PowerSO-10R.F.(gullw
          29727
          絕對原裝正品全新進口深圳現(xiàn)貨
          詢價
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          ST專家
          20+
          PowerSO-10R.F.(gullw
          69052
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          更多PD200供應商 更新時間2026-1-18 10:51:00
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