絲?。?strong>P8；Package：SOT-23；Silicon Planar Zener Diodes

■ Silicon Planar Zener Diodes This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables

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YFWDIODE

佑風(fēng)微

絲印：P8；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Wide working voltage range: nominal 2.4 V to 75 V (E24 range) ? Two tolerance series: ± 2 and ± 5 3. Applications ? Gene

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NEXPERIA

安世

絲?。?strong>P8；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Wide working voltage range: nominal 2.4 V to 75 V (E24 range) ? Two tolerance series: ± 2 and ± 5 ? Qualified according to

文件：233.91 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIA

安世

絲印：P8；Package：X1SON；ESD601 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features ? IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge ? ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air-gap discharge ? IEC 61000-4-5 surge protection: – 2.7A (8/20μs) ? I/O capacitance: 0.3pF (typical) ? Ultra low le

文件：1.87709 Mbytes 頁(yè)數(shù)：15 Pages

TI

德州儀器

絲?。?strong>P8；Package：6Ld??TDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1μF to 4.7μF with an ESR of up to 200mΩ. Features ?

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RENESAS

瑞薩

絲?。?strong>P8；Package：SOD-541；Zener Diode

Features ● High reliability ● Zener Voltage 2.0V~75V

文件：213.4 Kbytes 頁(yè)數(shù)：3 Pages

FS

絲?。?strong>P8；Package：TESQ；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁(yè)數(shù)：73 Pages

TOSHIBA

東芝

絲?。?strong>P8；Package：USQ；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁(yè)數(shù)：73 Pages

TOSHIBA

東芝

絲印：P8；Zener Protection Diode

Features ? Full Range of Working Voltage Options ? High ESD Ratings ? Wettable Flank Package for Optimal Automated Optical Inspection (AOI) ? SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These D

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ONSEMI

安森美半導(dǎo)體

絲印：P8；Package：SOT23；500 mA low VF dual MEGA Schottky barrier rectifier

Features and benefits * Average forward current: IF(AV) ≤ 0.5 A * Reverse voltage: VR ≤ 20 V * Low forward voltage * AEC-Q101 qualified * Small SMD plastic package

文件：452.57 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIA

安世