| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：352.36 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?strong>P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：352.34 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?strong>P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：352.34 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲印：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.56 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?strong>P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.54 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
絲印：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.54 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN | ||
P7N60FJDD2 | 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.56 Kbytes 頁數(shù)：9 Pages | SILAN 士蘭微 | SILAN |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
16+ |
QFP |
1052 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
SAMSUNG |
24+ |
QFP |
71 |
詢價 | |||
23+ |
23 |
現(xiàn)貨庫存 |
詢價 | ||||
SAMSUNG |
25+ |
QFP |
6500 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
SAMSUNG/三星 |
25+ |
QFP48 |
996880 |
只做原裝,歡迎來電資詢 |
詢價 | ||
SAMSUNG/三星 |
24+ |
QFP48 |
12000 |
原裝正品 有掛就有貨 |
詢價 | ||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價 | ||
3M |
新 |
17 |
全新原裝 貨期兩周 |
詢價 | |||
3M |
2022+ |
13 |
全新原裝 貨期兩周 |
詢價 | |||
SCS |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 |
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