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          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          DDTB123YC

          絲?。?strong>P66;Package:SOT-23;PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR

          Features ? Epitaxial Planar Die Construction ? Complementary NPN Types Available (DDTD) ? Built-In Biasing Resistors, R1, R2 ? Lead Free/RoHS Compliant (Note 2)

          文件:78.04 Kbytes 頁數(shù):3 Pages

          DIODES

          美臺半導(dǎo)體

          P6606

          InSb photoconductive detector

          Thermoelectrically cooled detectors capable of long-term measurements Features ● Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 μm. ● Photoconductive element that changes electrical resistance by input of IR radiation ● Easy-to-use detector/preamp modul

          文件:155.84 Kbytes 頁數(shù):4 Pages

          HAMAMATSUHamamatsu Photonics Co.,Ltd.

          濱松光子濱松光子學(xué)株式會社

          P6606-110

          InSb photoconductive detector

          Thermoelectrically cooled detectors capable of long-term measurements Features ● Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 μm. ● Photoconductive element that changes electrical resistance by input of IR radiation ● Easy-to-use detector/preamp modul

          文件:155.84 Kbytes 頁數(shù):4 Pages

          HAMAMATSUHamamatsu Photonics Co.,Ltd.

          濱松光子濱松光子學(xué)株式會社

          P6606-210

          InSb photoconductive detector

          Thermoelectrically cooled detectors capable of long-term measurements Features ● Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 μm. ● Photoconductive element that changes electrical resistance by input of IR radiation ● Easy-to-use detector/preamp modul

          文件:155.84 Kbytes 頁數(shù):4 Pages

          HAMAMATSUHamamatsu Photonics Co.,Ltd.

          濱松光子濱松光子學(xué)株式會社

          P6606-305

          InSb photoconductive detector

          Thermoelectrically cooled detectors capable of long-term measurements Features ● Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 μm. ● Photoconductive element that changes electrical resistance by input of IR radiation ● Easy-to-use detector/preamp modul

          文件:155.84 Kbytes 頁數(shù):4 Pages

          HAMAMATSUHamamatsu Photonics Co.,Ltd.

          濱松光子濱松光子學(xué)株式會社

          P6606-310

          InSb photoconductive detector

          Thermoelectrically cooled detectors capable of long-term measurements Features ● Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 μm. ● Photoconductive element that changes electrical resistance by input of IR radiation ● Easy-to-use detector/preamp modul

          文件:155.84 Kbytes 頁數(shù):4 Pages

          HAMAMATSUHamamatsu Photonics Co.,Ltd.

          濱松光子濱松光子學(xué)株式會社

          P6606-320

          InSb photoconductive detector

          Thermoelectrically cooled detectors capable of long-term measurements Features ● Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 μm. ● Photoconductive element that changes electrical resistance by input of IR radiation ● Easy-to-use detector/preamp modul

          文件:155.84 Kbytes 頁數(shù):4 Pages

          HAMAMATSUHamamatsu Photonics Co.,Ltd.

          濱松光子濱松光子學(xué)株式會社

          P66F7R5SN

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID=66A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

          文件:312.91 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          P66F7R5SNK

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current –ID=66A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

          文件:313.23 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          P66

          P cores and accessories

          文件:51.12 Kbytes 頁數(shù):4 Pages

          FERROXCUBE

          詳細參數(shù)

          • 型號:

            P66

          • 制造商:

            DIODES

          • 制造商全稱:

            Diodes Incorporated

          • 功能描述:

            PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR

          供應(yīng)商型號品牌批號封裝庫存備注價格
          SOT-23
          23+
          NA
          15659
          振宏微專業(yè)只做正品,假一罰百!
          詢價
          DIODES
          20+
          SOT23
          36800
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          DIODES/美臺
          24+
          SOT-23-3
          15000
          原裝現(xiàn)貨,專業(yè)配單專家
          詢價
          DIODES
          25+
          SOT23
          30000
          代理全新原裝現(xiàn)貨,價格優(yōu)勢
          詢價
          DIODES/美臺
          23+
          SOT-23-3
          12730
          原裝正品代理渠道價格優(yōu)勢
          詢價
          DIODES(美臺)
          2447
          SOT-23
          105000
          3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
          詢價
          DIODES/美臺
          21+
          SOT-23
          30000
          百域芯優(yōu)勢 實單必成 可開13點增值稅
          詢價
          DIODES
          25+
          SOT-23-3
          16750
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          DIODES/美臺
          21+
          SOT-23-3
          21000
          只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
          詢價
          Diodes(美臺)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
          詢價
          更多P66供應(yīng)商 更新時間2026-1-17 17:00:00
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